sku:RF Transistor 2N2907A

RF Transistor 2N2907A

$2.00

Configuration: Single
Transistor Polarity: PNP
Collector- Base Voltage VCBO: – 60 V
Collector- Emitter Voltage VCEO Max: – 60 V
Emitter- Base Voltage VEBO: – 5 V
Collector-Emitter Saturation Voltage: – 1.6 V
Maximum DC Collector Current: 0.6 A
Gain Bandwidth Product fT: 200 MHz
Maximum Operating Temperature: + 175 C
Mounting Style: Through Hole
Package / Case: TO-18
Continuous Collector Current: – 0.6 A
DC Collector/Base Gain hfe Min: 50
DC Current Gain hFE Max: 300
Maximum Power Dissipation: 400 mW
Minimum Operating Temperature: – 65 C

1 in stock

Quantity:
Categories: , Condition: New Availability: in stock

Description

Configuration: Single
Transistor Polarity: PNP
Collector- Base Voltage VCBO: – 60 V
Collector- Emitter Voltage VCEO Max: – 60 V
Emitter- Base Voltage VEBO: – 5 V
Collector-Emitter Saturation Voltage: – 1.6 V
Maximum DC Collector Current: 0.6 A
Gain Bandwidth Product fT: 200 MHz
Maximum Operating Temperature: + 175 C
Mounting Style: Through Hole
Package / Case: TO-18
Continuous Collector Current: – 0.6 A
DC Collector/Base Gain hfe Min: 50
DC Current Gain hFE Max: 300
Maximum Power Dissipation: 400 mW
Minimum Operating Temperature: – 65 C

Additional information

Weight 1.0000 kg
Dimensions 1.0000 x 1.0000 x 1.0000 cm
Condition

New